Infineon-Single FETs, MOSFETs-IPW60R099P6

Description

Drain to Source Voltage;650V/Gate Charge(Qg);70nC@10V/Number;1 N-channel/Pd - Power Dissipation;278W/RDS(on);99mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);140pF/Current - Continuous Drain(Id);24A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;3.33nF


N-Channel 650V 24A 278W Through Hole TO-247

Product form

Drain to Source Voltage;650V/Gate Charge(Qg);70nC@10V/Number;1 N-channel/Pd - Power Dissipation;278W/RDS(on);99mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);140pF/Current - Continuous Drain(Id);24A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;650V/Gate Charge(Qg);70nC@10V/Number;1 N-channel/Pd - Power Dissipation;278W/RDS(on);99mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);140pF/Current - Continuous Drain(Id);24A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;3.33nF


    N-Channel 650V 24A 278W Through Hole TO-247

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