Infineon-Single FETs, MOSFETs-IPW60R099P7XKSA1

Description

Drain to Source Voltage;600V/Gate Charge(Qg);45nC@10V/Number;1 N-channel/Pd - Power Dissipation;117W/RDS(on);99mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);31A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;1.952nF


N-Channel 600V 31A 117W Through Hole TO-247-3

Product form

Drain to Source Voltage;600V/Gate Charge(Qg);45nC@10V/Number;1 N-channel/Pd - Power Dissipation;117W/RDS(on);99mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);31A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;1.952nFN-Channel 600V 31A... Read more

$25.29 Excl. VAT

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    Description

    Drain to Source Voltage;600V/Gate Charge(Qg);45nC@10V/Number;1 N-channel/Pd - Power Dissipation;117W/RDS(on);99mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);31A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;1.952nF


    N-Channel 600V 31A 117W Through Hole TO-247-3

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