Infineon-Single FETs, MOSFETs-IPW65R190CFD

Description

Drain to Source Voltage;650V/Gate Charge(Qg);68nC@480V/Number;1 N-channel/Pd - Power Dissipation;151W/RDS(on);190mΩ@10V/Current - Continuous Drain(Id);17.5A/Gate Threshold Voltage (Vgs(th));4.5V/Ciss-Input Capacitance;1.85nF


N-Channel 650V 17.5A 151W Through Hole TO-247

Product form

Drain to Source Voltage;650V/Gate Charge(Qg);68nC@480V/Number;1 N-channel/Pd - Power Dissipation;151W/RDS(on);190mΩ@10V/Current - Continuous Drain(Id);17.5A/Gate Threshold Voltage (Vgs(th));4.5V/Ciss-Input Capacitance;1.85nFN-Channel 650V 17.5A 151W Through... Read more

$4.65 Excl. VAT

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    Description

    Drain to Source Voltage;650V/Gate Charge(Qg);68nC@480V/Number;1 N-channel/Pd - Power Dissipation;151W/RDS(on);190mΩ@10V/Current - Continuous Drain(Id);17.5A/Gate Threshold Voltage (Vgs(th));4.5V/Ciss-Input Capacitance;1.85nF


    N-Channel 650V 17.5A 151W Through Hole TO-247

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