Infineon-Single FETs, MOSFETs-IPZA60R080P7

Description

Drain to Source Voltage;650V/Gate Charge(Qg);51nC@10V/Number;1 N-channel/Pd - Power Dissipation;129W/RDS(on);80mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);716pF/Current - Continuous Drain(Id);23A/Gate Threshold Voltage (Vgs(th));3.5V/Ciss-Input Capacitance;2.18nF


650V 80mΩ@10V 1 N-channel 129W TO-247-4 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;650V/Gate Charge(Qg);51nC@10V/Number;1 N-channel/Pd - Power Dissipation;129W/RDS(on);80mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);716pF/Current - Continuous Drain(Id);23A/Gate Threshold Voltage (Vgs(th));3.5V/Ciss-Input... Read more

$13.77 Excl. VAT

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    Description

    Drain to Source Voltage;650V/Gate Charge(Qg);51nC@10V/Number;1 N-channel/Pd - Power Dissipation;129W/RDS(on);80mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);716pF/Current - Continuous Drain(Id);23A/Gate Threshold Voltage (Vgs(th));3.5V/Ciss-Input Capacitance;2.18nF


    650V 80mΩ@10V 1 N-channel 129W TO-247-4 Single FETs, MOSFETs RoHS

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