Infineon-Single FETs, MOSFETs-IQE030N06NM5ATMA1

Description

Drain to Source Voltage;60V/Gate Charge(Qg);49nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;107W/RDS(on);3mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);65pF/Current - Continuous Drain(Id);137A/Gate Threshold Voltage (Vgs(th));3.3V/Ciss-Input Capacitance;3.8nF/Output Capacitance(Coss);780pF


60V 3mΩ@10V 1 N-channel 107W TSON-8-EP(3.3x3.3) Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;60V/Gate Charge(Qg);49nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;107W/RDS(on);3mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);65pF/Current - Continuous Drain(Id);137A/Gate Threshold Voltage (Vgs(th));3.3V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;60V/Gate Charge(Qg);49nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;107W/RDS(on);3mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);65pF/Current - Continuous Drain(Id);137A/Gate Threshold Voltage (Vgs(th));3.3V/Ciss-Input Capacitance;3.8nF/Output Capacitance(Coss);780pF


    60V 3mΩ@10V 1 N-channel 107W TSON-8-EP(3.3x3.3) Single FETs, MOSFETs RoHS

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