Infineon-Single FETs, MOSFETs-IRF1010NPBF

Description

Drain to Source Voltage;55V/Gate Charge(Qg);120nC@10V/Number;1 N-channel/Pd - Power Dissipation;180W/RDS(on);11mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);140pF/Current - Continuous Drain(Id);60A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;3.21nF


55V 11mΩ@10V 1 N-channel 180W TO-220AB Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;55V/Gate Charge(Qg);120nC@10V/Number;1 N-channel/Pd - Power Dissipation;180W/RDS(on);11mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);140pF/Current - Continuous Drain(Id);60A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;55V/Gate Charge(Qg);120nC@10V/Number;1 N-channel/Pd - Power Dissipation;180W/RDS(on);11mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);140pF/Current - Continuous Drain(Id);60A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;3.21nF


    55V 11mΩ@10V 1 N-channel 180W TO-220AB Single FETs, MOSFETs RoHS

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