Infineon-Single FETs, MOSFETs-IRF1310NPBF

Description

Drain to Source Voltage;100V/Gate Charge(Qg);110nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;160W/RDS(on);36mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);230pF/Current - Continuous Drain(Id);42A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;1.9nF/Output Capacitance(Coss);450pF


N-Channel 100V 42A 160W Through Hole TO-220AB

Product form

Drain to Source Voltage;100V/Gate Charge(Qg);110nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;160W/RDS(on);36mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);230pF/Current - Continuous Drain(Id);42A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;100V/Gate Charge(Qg);110nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;160W/RDS(on);36mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);230pF/Current - Continuous Drain(Id);42A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;1.9nF/Output Capacitance(Coss);450pF


    N-Channel 100V 42A 160W Through Hole TO-220AB

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