Infineon-Single FETs, MOSFETs-IRF200P223

Description

Drain to Source Voltage;200V/Gate Charge(Qg);68nC@10V/Number;1 N-channel/Pd - Power Dissipation;313W/RDS(on);9.5mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);8.7pF/Current - Continuous Drain(Id);100A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input Capacitance;5.094nF


200V 9.5mΩ@10V 1 N-channel 313W TO-247AC Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;200V/Gate Charge(Qg);68nC@10V/Number;1 N-channel/Pd - Power Dissipation;313W/RDS(on);9.5mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);8.7pF/Current - Continuous Drain(Id);100A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input... Read more

$45.00 Excl. VAT

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    Description

    Drain to Source Voltage;200V/Gate Charge(Qg);68nC@10V/Number;1 N-channel/Pd - Power Dissipation;313W/RDS(on);9.5mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);8.7pF/Current - Continuous Drain(Id);100A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input Capacitance;5.094nF


    200V 9.5mΩ@10V 1 N-channel 313W TO-247AC Single FETs, MOSFETs RoHS

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