Infineon-Single FETs, MOSFETs-IRF3808STRLPBF

Description

Drain to Source Voltage;75V/Gate Charge(Qg);220nC@10V/Number;1 N-channel/Pd - Power Dissipation;200W/RDS(on);7mΩ@10V/Operating Temperature -;-55℃~+175℃/Current - Continuous Drain(Id);106A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;5.31nF


75V 7mΩ@10V 1 N-channel 200W D2PAK Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;75V/Gate Charge(Qg);220nC@10V/Number;1 N-channel/Pd - Power Dissipation;200W/RDS(on);7mΩ@10V/Operating Temperature -;-55℃~+175℃/Current - Continuous Drain(Id);106A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;5.31nF75V 7mΩ@10V 1... Read more

$6.93 Excl. VAT

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    Description

    Drain to Source Voltage;75V/Gate Charge(Qg);220nC@10V/Number;1 N-channel/Pd - Power Dissipation;200W/RDS(on);7mΩ@10V/Operating Temperature -;-55℃~+175℃/Current - Continuous Drain(Id);106A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;5.31nF


    75V 7mΩ@10V 1 N-channel 200W D2PAK Single FETs, MOSFETs RoHS

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