Infineon-Single FETs, MOSFETs-IRF6655TRPBF

Description

Drain to Source Voltage;100V/Gate Charge(Qg);8.7nC/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;42W/RDS(on);62mΩ@10V/Operating Temperature -;-40℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);29pF/Current - Continuous Drain(Id);19A/Gate Threshold Voltage (Vgs(th));4.8V/Ciss-Input Capacitance;530pF/Output Capacitance(Coss);110pF


100V 62mΩ@10V 1 N-channel 42W Single FETs, MOSFETs RoHS

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Drain to Source Voltage;100V/Gate Charge(Qg);8.7nC/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;42W/RDS(on);62mΩ@10V/Operating Temperature -;-40℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);29pF/Current - Continuous Drain(Id);19A/Gate Threshold Voltage (Vgs(th));4.8V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;100V/Gate Charge(Qg);8.7nC/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;42W/RDS(on);62mΩ@10V/Operating Temperature -;-40℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);29pF/Current - Continuous Drain(Id);19A/Gate Threshold Voltage (Vgs(th));4.8V/Ciss-Input Capacitance;530pF/Output Capacitance(Coss);110pF


    100V 62mΩ@10V 1 N-channel 42W Single FETs, MOSFETs RoHS

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