Infineon-Single FETs, MOSFETs-IRF820PBF

Description

Drain to Source Voltage;500V/Gate Charge(Qg);24nC/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;50W/RDS(on);3Ω@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);37pF/Current - Continuous Drain(Id);2.5A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;360pF/Output Capacitance(Coss);92pF


500V 3Ω@10V 1 N-channel 50W TO-220 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;500V/Gate Charge(Qg);24nC/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;50W/RDS(on);3Ω@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);37pF/Current - Continuous Drain(Id);2.5A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;500V/Gate Charge(Qg);24nC/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;50W/RDS(on);3Ω@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);37pF/Current - Continuous Drain(Id);2.5A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;360pF/Output Capacitance(Coss);92pF


    500V 3Ω@10V 1 N-channel 50W TO-220 Single FETs, MOSFETs RoHS

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