Infineon-Single FETs, MOSFETs-IRFB3207ZPbF

Description

Drain to Source Voltage;75V/Gate Charge(Qg);170nC/Number;1 N-channel/Pd - Power Dissipation;300W/RDS(on);3.3mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);270pF/Current - Continuous Drain(Id);170A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input Capacitance;6.92nF


N-Channel 75V 170A 300W Through Hole TO-220AB

Product form

Drain to Source Voltage;75V/Gate Charge(Qg);170nC/Number;1 N-channel/Pd - Power Dissipation;300W/RDS(on);3.3mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);270pF/Current - Continuous Drain(Id);170A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;75V/Gate Charge(Qg);170nC/Number;1 N-channel/Pd - Power Dissipation;300W/RDS(on);3.3mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);270pF/Current - Continuous Drain(Id);170A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input Capacitance;6.92nF


    N-Channel 75V 170A 300W Through Hole TO-220AB

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