Infineon-Single FETs, MOSFETs-IRFB4410ZGPBF

Description

Drain to Source Voltage;100V/Gate Charge(Qg);120nC/Number;1 N-channel/Pd - Power Dissipation;230W/RDS(on);7.2mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);170pF/Current - Continuous Drain(Id);97A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input Capacitance;4.82nF


100V 7.2mΩ@10V 1 N-channel 230W TO-220AB Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;100V/Gate Charge(Qg);120nC/Number;1 N-channel/Pd - Power Dissipation;230W/RDS(on);7.2mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);170pF/Current - Continuous Drain(Id);97A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;100V/Gate Charge(Qg);120nC/Number;1 N-channel/Pd - Power Dissipation;230W/RDS(on);7.2mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);170pF/Current - Continuous Drain(Id);97A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input Capacitance;4.82nF


    100V 7.2mΩ@10V 1 N-channel 230W TO-220AB Single FETs, MOSFETs RoHS

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