Infineon-Single FETs, MOSFETs-IRFD9120PbF

Description

Drain to Source Voltage;100V/Gate Charge(Qg);18nC/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;1.3W/RDS(on);600mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);45pF/Current - Continuous Drain(Id);1A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;390pF/Output Capacitance(Coss);170pF


100V 600mΩ@10V 1 P-Channel 1.3W HEXDIP-4 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;100V/Gate Charge(Qg);18nC/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;1.3W/RDS(on);600mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);45pF/Current - Continuous Drain(Id);1A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;100V/Gate Charge(Qg);18nC/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;1.3W/RDS(on);600mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);45pF/Current - Continuous Drain(Id);1A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;390pF/Output Capacitance(Coss);170pF


    100V 600mΩ@10V 1 P-Channel 1.3W HEXDIP-4 Single FETs, MOSFETs RoHS

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