Infineon-Single FETs, MOSFETs-IRFHM3911TRPBF

Description

Drain to Source Voltage;100V/Gate Charge(Qg);17nC@10V/Number;1 N-channel/Pd - Power Dissipation;2.8W/RDS(on);115mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);13pF/Current - Continuous Drain(Id);3.2A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;760pF


N-Channel 100V 2.8W Surface Mount PQFN-8L(3.3x3.3)

Product form

Drain to Source Voltage;100V/Gate Charge(Qg);17nC@10V/Number;1 N-channel/Pd - Power Dissipation;2.8W/RDS(on);115mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);13pF/Current - Continuous Drain(Id);3.2A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;100V/Gate Charge(Qg);17nC@10V/Number;1 N-channel/Pd - Power Dissipation;2.8W/RDS(on);115mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);13pF/Current - Continuous Drain(Id);3.2A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;760pF


    N-Channel 100V 2.8W Surface Mount PQFN-8L(3.3x3.3)

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