Infineon-Single FETs, MOSFETs-IRFHM8326TRPBF

Description

Drain to Source Voltage;30V/Gate Charge(Qg);20nC@10V/Number;1 N-channel/Pd - Power Dissipation;2.8W/RDS(on);4.7mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);273pF/Current - Continuous Drain(Id);19A/Gate Threshold Voltage (Vgs(th));1.7V


30V 4.7mΩ@10V 1 N-channel 2.8W PQFN-8(3.1x3.1) Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;30V/Gate Charge(Qg);20nC@10V/Number;1 N-channel/Pd - Power Dissipation;2.8W/RDS(on);4.7mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);273pF/Current - Continuous Drain(Id);19A/Gate Threshold Voltage (Vgs(th));1.7V30V... Read more

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);20nC@10V/Number;1 N-channel/Pd - Power Dissipation;2.8W/RDS(on);4.7mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);273pF/Current - Continuous Drain(Id);19A/Gate Threshold Voltage (Vgs(th));1.7V


    30V 4.7mΩ@10V 1 N-channel 2.8W PQFN-8(3.1x3.1) Single FETs, MOSFETs RoHS

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