Infineon-Single FETs, MOSFETs-IRFP448PBF

Description

Drain to Source Voltage;500V/Gate Charge(Qg);84nC@10V/Number;1 N-channel/Pd - Power Dissipation;180W/RDS(on);600mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);220pF/Current - Continuous Drain(Id);11A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input Capacitance;1.9nF


500V 600mΩ@10V 1 N-channel 180W TO-247AC-3 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;500V/Gate Charge(Qg);84nC@10V/Number;1 N-channel/Pd - Power Dissipation;180W/RDS(on);600mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);220pF/Current - Continuous Drain(Id);11A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;500V/Gate Charge(Qg);84nC@10V/Number;1 N-channel/Pd - Power Dissipation;180W/RDS(on);600mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);220pF/Current - Continuous Drain(Id);11A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input Capacitance;1.9nF


    500V 600mΩ@10V 1 N-channel 180W TO-247AC-3 Single FETs, MOSFETs RoHS

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