Infineon-Single FETs, MOSFETs-IRFP7718PBF

Description

Drain to Source Voltage;75V/Gate Charge(Qg);830nC@10V/Number;1 N-channel/Pd - Power Dissipation;517W/RDS(on);1.8mΩ@10V/Operating Temperature -;-55℃~+175℃/Current - Continuous Drain(Id);355A/Gate Threshold Voltage (Vgs(th));2.1V


75V 1.8mΩ@10V 1 N-channel 517W TO-247 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;75V/Gate Charge(Qg);830nC@10V/Number;1 N-channel/Pd - Power Dissipation;517W/RDS(on);1.8mΩ@10V/Operating Temperature -;-55℃~+175℃/Current - Continuous Drain(Id);355A/Gate Threshold Voltage (Vgs(th));2.1V75V 1.8mΩ@10V 1 N-channel... Read more

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    Description

    Drain to Source Voltage;75V/Gate Charge(Qg);830nC@10V/Number;1 N-channel/Pd - Power Dissipation;517W/RDS(on);1.8mΩ@10V/Operating Temperature -;-55℃~+175℃/Current - Continuous Drain(Id);355A/Gate Threshold Voltage (Vgs(th));2.1V


    75V 1.8mΩ@10V 1 N-channel 517W TO-247 Single FETs, MOSFETs RoHS

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