Infineon-Single FETs, MOSFETs-IRFR812TRPBF

Description

Drain to Source Voltage;500V/Gate Charge(Qg);20nC@10V/Number;1 N-channel/Pd - Power Dissipation;78W/RDS(on);1.85Ω@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);3.6A/Gate Threshold Voltage (Vgs(th));3V


500V 1.85Ω@10V 1 N-channel 78W DPAK Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;500V/Gate Charge(Qg);20nC@10V/Number;1 N-channel/Pd - Power Dissipation;78W/RDS(on);1.85Ω@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);3.6A/Gate Threshold Voltage (Vgs(th));3V500V 1.85Ω@10V 1 N-channel... Read more

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    Description

    Drain to Source Voltage;500V/Gate Charge(Qg);20nC@10V/Number;1 N-channel/Pd - Power Dissipation;78W/RDS(on);1.85Ω@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);3.6A/Gate Threshold Voltage (Vgs(th));3V


    500V 1.85Ω@10V 1 N-channel 78W DPAK Single FETs, MOSFETs RoHS

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