Infineon-Single FETs, MOSFETs-IRL2910STRRPBF

Description

Drain to Source Voltage;100V/Gate Charge(Qg);140nC@5V/Number;1 N-channel/Pd - Power Dissipation;200W/RDS(on);26mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);330pF/Current - Continuous Drain(Id);55A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input Capacitance;3.7nF


100V 26mΩ@10V 1 N-channel 200W D2PAK Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;100V/Gate Charge(Qg);140nC@5V/Number;1 N-channel/Pd - Power Dissipation;200W/RDS(on);26mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);330pF/Current - Continuous Drain(Id);55A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input... Read more

$45.00 Excl. VAT

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    Description

    Drain to Source Voltage;100V/Gate Charge(Qg);140nC@5V/Number;1 N-channel/Pd - Power Dissipation;200W/RDS(on);26mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);330pF/Current - Continuous Drain(Id);55A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input Capacitance;3.7nF


    100V 26mΩ@10V 1 N-channel 200W D2PAK Single FETs, MOSFETs RoHS

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