Infineon-Single FETs, MOSFETs-IRLL014NPBF

Description

Drain to Source Voltage;55V/Gate Charge(Qg);14nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;2.1W/RDS(on);280mΩ@4V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);30pF/Current - Continuous Drain(Id);2A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input Capacitance;230pF/Output Capacitance(Coss);66pF


55V 280mΩ@4V 1 N-channel 2.1W SOT-223 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;55V/Gate Charge(Qg);14nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;2.1W/RDS(on);280mΩ@4V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);30pF/Current - Continuous Drain(Id);2A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;55V/Gate Charge(Qg);14nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;2.1W/RDS(on);280mΩ@4V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);30pF/Current - Continuous Drain(Id);2A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input Capacitance;230pF/Output Capacitance(Coss);66pF


    55V 280mΩ@4V 1 N-channel 2.1W SOT-223 Single FETs, MOSFETs RoHS

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