Infineon-Single FETs, MOSFETs-IRLR3636PBF

Description

Drain to Source Voltage;60V/Gate Charge(Qg);49nC@4.5V/Number;1 N-channel/Pd - Power Dissipation;143W/RDS(on);8.3mΩ@4.5V/Operating Temperature -;-55℃~+175℃/Current - Continuous Drain(Id);99A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;3.779nF


60V 8.3mΩ@4.5V 1 N-channel 143W DPAK Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;60V/Gate Charge(Qg);49nC@4.5V/Number;1 N-channel/Pd - Power Dissipation;143W/RDS(on);8.3mΩ@4.5V/Operating Temperature -;-55℃~+175℃/Current - Continuous Drain(Id);99A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;3.779nF60V 8.3mΩ@4.5V 1... Read more

$1.62 Excl. VAT

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    Description

    Drain to Source Voltage;60V/Gate Charge(Qg);49nC@4.5V/Number;1 N-channel/Pd - Power Dissipation;143W/RDS(on);8.3mΩ@4.5V/Operating Temperature -;-55℃~+175℃/Current - Continuous Drain(Id);99A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;3.779nF


    60V 8.3mΩ@4.5V 1 N-channel 143W DPAK Single FETs, MOSFETs RoHS

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