Infineon-Single FETs, MOSFETs-IRLU2905ZPBF

Description

Drain to Source Voltage;55V/Gate Charge(Qg);35nC@5V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;110W/RDS(on);13.5mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);130pF/Current - Continuous Drain(Id);60A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;1.57nF/Output Capacitance(Coss);840pF


55V 13.5mΩ@10V 1 N-channel 110W IPAK(TO-251) Single FETs, MOSFETs

Product form

Drain to Source Voltage;55V/Gate Charge(Qg);35nC@5V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;110W/RDS(on);13.5mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);130pF/Current - Continuous Drain(Id);60A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;55V/Gate Charge(Qg);35nC@5V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;110W/RDS(on);13.5mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);130pF/Current - Continuous Drain(Id);60A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;1.57nF/Output Capacitance(Coss);840pF


    55V 13.5mΩ@10V 1 N-channel 110W IPAK(TO-251) Single FETs, MOSFETs

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