Infineon-Single FETs, MOSFETs-ISZ0501NLSATMA1

Description

Drain to Source Voltage;25V/Gate Charge(Qg);6.3nC/Number;1 N-channel/Pd - Power Dissipation;2.1W/RDS(on);3.1mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);38pF/Current - Continuous Drain(Id);40A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input Capacitance;910pF


N-Channel 25V 40A 2.1W Surface Mount TSDSON-8FL

Product form

Drain to Source Voltage;25V/Gate Charge(Qg);6.3nC/Number;1 N-channel/Pd - Power Dissipation;2.1W/RDS(on);3.1mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);38pF/Current - Continuous Drain(Id);40A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;25V/Gate Charge(Qg);6.3nC/Number;1 N-channel/Pd - Power Dissipation;2.1W/RDS(on);3.1mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);38pF/Current - Continuous Drain(Id);40A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input Capacitance;910pF


    N-Channel 25V 40A 2.1W Surface Mount TSDSON-8FL

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