Infineon-Single FETs, MOSFETs-SI4420DYPBF

Description

Drain to Source Voltage;30V/Gate Charge(Qg);78nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;2.5W/RDS(on);9mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);150pF/Current - Continuous Drain(Id);12.5A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input Capacitance;2.24nF/Output Capacitance(Coss);1.1nF


30V 9mΩ@10V 1 N-channel 2.5W SO-8 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;30V/Gate Charge(Qg);78nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;2.5W/RDS(on);9mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);150pF/Current - Continuous Drain(Id);12.5A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);78nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;2.5W/RDS(on);9mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);150pF/Current - Continuous Drain(Id);12.5A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input Capacitance;2.24nF/Output Capacitance(Coss);1.1nF


    30V 9mΩ@10V 1 N-channel 2.5W SO-8 Single FETs, MOSFETs RoHS

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