Infineon-Single FETs, MOSFETs-SPI11N60C3XKSA1

Description

Drain to Source Voltage;650V/Gate Charge(Qg);60nC@10V/Number;1 N-channel/Pd - Power Dissipation;125W/RDS(on);380mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);30pF/Current - Continuous Drain(Id);11A/Gate Threshold Voltage (Vgs(th));3.9V/Ciss-Input Capacitance;1.2nF/Output Capacitance(Coss);390pF


650V 380mΩ@10V 1 N-channel 125W TO-262-3-1 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;650V/Gate Charge(Qg);60nC@10V/Number;1 N-channel/Pd - Power Dissipation;125W/RDS(on);380mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);30pF/Current - Continuous Drain(Id);11A/Gate Threshold Voltage (Vgs(th));3.9V/Ciss-Input... Read more

$4.47 Excl. VAT

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    Description

    Drain to Source Voltage;650V/Gate Charge(Qg);60nC@10V/Number;1 N-channel/Pd - Power Dissipation;125W/RDS(on);380mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);30pF/Current - Continuous Drain(Id);11A/Gate Threshold Voltage (Vgs(th));3.9V/Ciss-Input Capacitance;1.2nF/Output Capacitance(Coss);390pF


    650V 380mΩ@10V 1 N-channel 125W TO-262-3-1 Single FETs, MOSFETs RoHS

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