Infineon-Single FETs, MOSFETs-SPP80N06S209

Description

Drain to Source Voltage;55V/Gate Charge(Qg);80nC/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;190W/RDS(on);9.1mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);230pF/Current - Continuous Drain(Id);80A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;3.14nF/Output Capacitance(Coss);810pF


55V 9.1mΩ@10V 1 N-channel 190W TO-220-3 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;55V/Gate Charge(Qg);80nC/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;190W/RDS(on);9.1mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);230pF/Current - Continuous Drain(Id);80A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;55V/Gate Charge(Qg);80nC/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;190W/RDS(on);9.1mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);230pF/Current - Continuous Drain(Id);80A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;3.14nF/Output Capacitance(Coss);810pF


    55V 9.1mΩ@10V 1 N-channel 190W TO-220-3 Single FETs, MOSFETs RoHS

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