FET Type;1 N-channel/Gate-Source Breakdown Voltage (Vgss);40V/Pd - Power Dissipation;350mW/Drain Current (Idss);200uA@20V/Ciss-Input Capacitance;4pF@20V/Operating Temperature;-55℃~+150℃1 N-channel 200uA@20V 350mW 40V SOT-23-3 JFETs RoHS Read more

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