FET Type;1 P-Channel/Gate-Source Breakdown Voltage (Vgss);30V/Pd - Power Dissipation;500mW/RDS(on);100Ω/Ciss-Input Capacitance;25pF@15V/Operating Temperature;-55℃~+125℃500mW 1 P-Channel 100Ω 30V SOT-23 JFETs RoHS Read more

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