IPS-Single FETs, MOSFETs-FTB07N08N

Description

Drain to Source Voltage;85V/Gate Charge(Qg);74.4nC@10V/Number;1 N-channel/Pd - Power Dissipation;208W/RDS(on);6mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);253pF/Current - Continuous Drain(Id);120A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input Capacitance;4.572nF


85V 6mΩ@10V 1 N-channel 208W TO-263-2 Single FETs, MOSFETs RoHS

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Drain to Source Voltage;85V/Gate Charge(Qg);74.4nC@10V/Number;1 N-channel/Pd - Power Dissipation;208W/RDS(on);6mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);253pF/Current - Continuous Drain(Id);120A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;85V/Gate Charge(Qg);74.4nC@10V/Number;1 N-channel/Pd - Power Dissipation;208W/RDS(on);6mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);253pF/Current - Continuous Drain(Id);120A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input Capacitance;4.572nF


    85V 6mΩ@10V 1 N-channel 208W TO-263-2 Single FETs, MOSFETs RoHS

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