IPS-Single FETs, MOSFETs-FTP02N04NA

Description

Drain to Source Voltage;40V/Gate Charge(Qg);250nC@10V/Number;1 N-channel/Pd - Power Dissipation;312.5W/RDS(on);1.8mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);950pF/Current - Continuous Drain(Id);300A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input Capacitance;14.36nF


40V 1.8mΩ@10V 1 N-channel 312.5W TO-220 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;40V/Gate Charge(Qg);250nC@10V/Number;1 N-channel/Pd - Power Dissipation;312.5W/RDS(on);1.8mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);950pF/Current - Continuous Drain(Id);300A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;40V/Gate Charge(Qg);250nC@10V/Number;1 N-channel/Pd - Power Dissipation;312.5W/RDS(on);1.8mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);950pF/Current - Continuous Drain(Id);300A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input Capacitance;14.36nF


    40V 1.8mΩ@10V 1 N-channel 312.5W TO-220 Single FETs, MOSFETs RoHS

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