Jiangsu JieJie Microelectronics-Single FETs, MOSFETs-JMGE120V09A

Description

Drain to Source Voltage;85V/Gate Charge(Qg);60nC@10V/Number;1 N-channel/Pd - Power Dissipation;184W/RDS(on);5.2mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);340pF/Current - Continuous Drain(Id);130A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;3.75nF


N-Channel 85V 130A 184W Surface Mount TO-263

Product form

Drain to Source Voltage;85V/Gate Charge(Qg);60nC@10V/Number;1 N-channel/Pd - Power Dissipation;184W/RDS(on);5.2mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);340pF/Current - Continuous Drain(Id);130A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;85V/Gate Charge(Qg);60nC@10V/Number;1 N-channel/Pd - Power Dissipation;184W/RDS(on);5.2mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);340pF/Current - Continuous Drain(Id);130A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;3.75nF


    N-Channel 85V 130A 184W Surface Mount TO-263

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