Jiangsu JieJie Microelectronics-Single FETs, MOSFETs-JMSH1004BGQ

Description

Drain to Source Voltage;100V/Gate Charge(Qg);57nC@10V/Number;1 N-channel/Pd - Power Dissipation;176W/RDS(on);3.3mΩ@10V/Operating Temperature -;-55℃~+175℃/Current - Continuous Drain(Id);138A/Gate Threshold Voltage (Vgs(th));2.7V/Ciss-Input Capacitance;3.434nF


100V 3.3mΩ@10V 1 N-channel 176W PDFN5x6-8L Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;100V/Gate Charge(Qg);57nC@10V/Number;1 N-channel/Pd - Power Dissipation;176W/RDS(on);3.3mΩ@10V/Operating Temperature -;-55℃~+175℃/Current - Continuous Drain(Id);138A/Gate Threshold Voltage (Vgs(th));2.7V/Ciss-Input Capacitance;3.434nF100V 3.3mΩ@10V 1... Read more

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    Description

    Drain to Source Voltage;100V/Gate Charge(Qg);57nC@10V/Number;1 N-channel/Pd - Power Dissipation;176W/RDS(on);3.3mΩ@10V/Operating Temperature -;-55℃~+175℃/Current - Continuous Drain(Id);138A/Gate Threshold Voltage (Vgs(th));2.7V/Ciss-Input Capacitance;3.434nF


    100V 3.3mΩ@10V 1 N-channel 176W PDFN5x6-8L Single FETs, MOSFETs RoHS

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