Jiangsu JieJie Microelectronics-Single FETs, MOSFETs-JMSL1018AG

Description

Drain to Source Voltage;100V/Gate Charge(Qg);13nC@10V/Number;1 N-channel/Pd - Power Dissipation;43W/RDS(on);14.5mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);5.1pF/Current - Continuous Drain(Id);35A/Gate Threshold Voltage (Vgs(th));1.9V/Ciss-Input Capacitance;769pF


100V 14.5mΩ@10V 1 N-channel 43W PDFN5x6-8L Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;100V/Gate Charge(Qg);13nC@10V/Number;1 N-channel/Pd - Power Dissipation;43W/RDS(on);14.5mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);5.1pF/Current - Continuous Drain(Id);35A/Gate Threshold Voltage (Vgs(th));1.9V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;100V/Gate Charge(Qg);13nC@10V/Number;1 N-channel/Pd - Power Dissipation;43W/RDS(on);14.5mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);5.1pF/Current - Continuous Drain(Id);35A/Gate Threshold Voltage (Vgs(th));1.9V/Ciss-Input Capacitance;769pF


    100V 14.5mΩ@10V 1 N-channel 43W PDFN5x6-8L Single FETs, MOSFETs RoHS

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