Jiangsu JieJie Microelectronics-Single FETs, MOSFETs-JMTJ210P02A

Description

Drain to Source Voltage;20V/Gate Charge(Qg);15.3nC@4.5V/Number;1 P-Channel/Pd - Power Dissipation;2W/RDS(on);32mΩ@2.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);231pF/Current - Continuous Drain(Id);7A/Gate Threshold Voltage (Vgs(th));400mV/Ciss-Input Capacitance;2nF


P-Channel 20V 7A 2W Surface Mount SOT-23-3L

Product form

Drain to Source Voltage;20V/Gate Charge(Qg);15.3nC@4.5V/Number;1 P-Channel/Pd - Power Dissipation;2W/RDS(on);32mΩ@2.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);231pF/Current - Continuous Drain(Id);7A/Gate Threshold Voltage (Vgs(th));400mV/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;20V/Gate Charge(Qg);15.3nC@4.5V/Number;1 P-Channel/Pd - Power Dissipation;2W/RDS(on);32mΩ@2.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);231pF/Current - Continuous Drain(Id);7A/Gate Threshold Voltage (Vgs(th));400mV/Ciss-Input Capacitance;2nF


    P-Channel 20V 7A 2W Surface Mount SOT-23-3L

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