Jilin Sino-Microelectronics-Single FETs, MOSFETs-JCS10N65FC

Description

Drain to Source Voltage;650V/Gate Charge(Qg);54nC@10V/Pd - Power Dissipation;40W/RDS(on);1Ω@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);25pF/Current - Continuous Drain(Id);10A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;1.66nF


650V 10A 40W Through Hole TO-220MF

Product form

Drain to Source Voltage;650V/Gate Charge(Qg);54nC@10V/Pd - Power Dissipation;40W/RDS(on);1Ω@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);25pF/Current - Continuous Drain(Id);10A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;1.66nF650V... Read more

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    Description

    Drain to Source Voltage;650V/Gate Charge(Qg);54nC@10V/Pd - Power Dissipation;40W/RDS(on);1Ω@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);25pF/Current - Continuous Drain(Id);10A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;1.66nF


    650V 10A 40W Through Hole TO-220MF

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