Jilin Sino-Microelectronics-Single FETs, MOSFETs-JCS4N65FB

Description

Drain to Source Voltage;650V/Gate Charge(Qg);19nC@10V/Pd - Power Dissipation;33W/RDS(on);4Ω@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);12pF/Current - Continuous Drain(Id);4A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;642pF/Output Capacitance(Coss);124pF


650V 4A 33W Through Hole TO-220MF

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Drain to Source Voltage;650V/Gate Charge(Qg);19nC@10V/Pd - Power Dissipation;33W/RDS(on);4Ω@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);12pF/Current - Continuous Drain(Id);4A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;642pF/Output... Read more

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    Description

    Drain to Source Voltage;650V/Gate Charge(Qg);19nC@10V/Pd - Power Dissipation;33W/RDS(on);4Ω@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);12pF/Current - Continuous Drain(Id);4A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;642pF/Output Capacitance(Coss);124pF


    650V 4A 33W Through Hole TO-220MF

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