Jilin Sino-Microelectronics-Single FETs, MOSFETs-JCS650C

Description

Drain to Source Voltage;200V/Gate Charge(Qg);136nC@10V/Number;1 N-channel/Pd - Power Dissipation;158W/RDS(on);85mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);105pF/Current - Continuous Drain(Id);28A/Gate Threshold Voltage (Vgs(th));4V/Output Capacitance(Coss);470pF


200V 28A 158W Through Hole TO-220C

Product form

Drain to Source Voltage;200V/Gate Charge(Qg);136nC@10V/Number;1 N-channel/Pd - Power Dissipation;158W/RDS(on);85mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);105pF/Current - Continuous Drain(Id);28A/Gate Threshold Voltage (Vgs(th));4V/Output... Read more

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    Description

    Drain to Source Voltage;200V/Gate Charge(Qg);136nC@10V/Number;1 N-channel/Pd - Power Dissipation;158W/RDS(on);85mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);105pF/Current - Continuous Drain(Id);28A/Gate Threshold Voltage (Vgs(th));4V/Output Capacitance(Coss);470pF


    200V 28A 158W Through Hole TO-220C

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