Jilin Sino-Microelectronics-Single FETs, MOSFETs-MT06N008A

Description

Drain to Source Voltage;60V/Gate Charge(Qg);78nC@10V/Number;1 N-channel/Pd - Power Dissipation;208W/RDS(on);8mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);200pF/Current - Continuous Drain(Id);120A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;3.38nF


N-Channel 60V 120A 208W Through Hole TO-220C

Product form

Drain to Source Voltage;60V/Gate Charge(Qg);78nC@10V/Number;1 N-channel/Pd - Power Dissipation;208W/RDS(on);8mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);200pF/Current - Continuous Drain(Id);120A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;60V/Gate Charge(Qg);78nC@10V/Number;1 N-channel/Pd - Power Dissipation;208W/RDS(on);8mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);200pF/Current - Continuous Drain(Id);120A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;3.38nF


    N-Channel 60V 120A 208W Through Hole TO-220C

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