JSCJ-Single Bipolar Transistors-3DD13003B

Description

type;NPN/Number;1 NPN/Collector - Emitter Voltage VCEO;400V/Current - Collector(Ic);1.5A/Pd - Power Dissipation;900mW/Operating Temperature;-55℃~+150℃/DC Current Gain;40/Current - Collector Cutoff;100uA/Vce Saturation(VCE(sat));3V/Emitter-Base Voltage(Vebo);9V


Bipolar (BJT) Transistor NPN 400V 1.5A 0.9W Through Hole TO-92

Product form

type;NPN/Number;1 NPN/Collector - Emitter Voltage VCEO;400V/Current - Collector(Ic);1.5A/Pd - Power Dissipation;900mW/Operating Temperature;-55℃~+150℃/DC Current Gain;40/Current - Collector Cutoff;100uA/Vce Saturation(VCE(sat));3V/Emitter-Base Voltage(Vebo);9VBipolar (BJT)... Read more

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    Description

    type;NPN/Number;1 NPN/Collector - Emitter Voltage VCEO;400V/Current - Collector(Ic);1.5A/Pd - Power Dissipation;900mW/Operating Temperature;-55℃~+150℃/DC Current Gain;40/Current - Collector Cutoff;100uA/Vce Saturation(VCE(sat));3V/Emitter-Base Voltage(Vebo);9V


    Bipolar (BJT) Transistor NPN 400V 1.5A 0.9W Through Hole TO-92

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