JSCJ-Single FETs, MOSFETs-AD-CJ3400

Description

Drain to Source Voltage;30V/Gate Charge(Qg);9.5nC@6V/Type;N-Channel/Pd - Power Dissipation;350mW/RDS(on);52mΩ@2.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);77pF/Current - Continuous Drain(Id);5.8A/Gate Threshold Voltage (Vgs(th));1.4V/Ciss-Input Capacitance;1.05nF


30V 52mΩ@2.5V 350mW SOT-23 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;30V/Gate Charge(Qg);9.5nC@6V/Type;N-Channel/Pd - Power Dissipation;350mW/RDS(on);52mΩ@2.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);77pF/Current - Continuous Drain(Id);5.8A/Gate Threshold Voltage (Vgs(th));1.4V/Ciss-Input Capacitance;1.05nF30V... Read more

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);9.5nC@6V/Type;N-Channel/Pd - Power Dissipation;350mW/RDS(on);52mΩ@2.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);77pF/Current - Continuous Drain(Id);5.8A/Gate Threshold Voltage (Vgs(th));1.4V/Ciss-Input Capacitance;1.05nF


    30V 52mΩ@2.5V 350mW SOT-23 Single FETs, MOSFETs RoHS

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