JSCJ-Single FETs, MOSFETs-CJAB40SN10

Description

Drain to Source Voltage;100V/Number;1 N-channel/Pd - Power Dissipation;1.5W/RDS(on);11mΩ@4.5V/Reverse Transfer Capacitance (Crss@Vds);11pF/Current - Continuous Drain(Id);40A/Gate Threshold Voltage (Vgs(th));1.4V/Ciss-Input Capacitance;2.92nF


100V 11mΩ@4.5V 1 N-channel 1.5W PDFNWB-8-EP(3.3x3.3) Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;100V/Number;1 N-channel/Pd - Power Dissipation;1.5W/RDS(on);11mΩ@4.5V/Reverse Transfer Capacitance (Crss@Vds);11pF/Current - Continuous Drain(Id);40A/Gate Threshold Voltage (Vgs(th));1.4V/Ciss-Input Capacitance;2.92nF100V 11mΩ@4.5V 1... Read more

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    Description

    Drain to Source Voltage;100V/Number;1 N-channel/Pd - Power Dissipation;1.5W/RDS(on);11mΩ@4.5V/Reverse Transfer Capacitance (Crss@Vds);11pF/Current - Continuous Drain(Id);40A/Gate Threshold Voltage (Vgs(th));1.4V/Ciss-Input Capacitance;2.92nF


    100V 11mΩ@4.5V 1 N-channel 1.5W PDFNWB-8-EP(3.3x3.3) Single FETs, MOSFETs RoHS

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