JSCJ-Single FETs, MOSFETs-CJAC110N03

Description

Drain to Source Voltage;30V/Gate Charge(Qg);42.5nC@4.5V/Number;1 N-channel/Pd - Power Dissipation;120W/RDS(on);3.5mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);110A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input Capacitance;4.83nF


30V 3.5mΩ@4.5V 1 N-channel 120W PDFNWB-8L-EP(5x6) Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;30V/Gate Charge(Qg);42.5nC@4.5V/Number;1 N-channel/Pd - Power Dissipation;120W/RDS(on);3.5mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);110A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input Capacitance;4.83nF30V 3.5mΩ@4.5V 1... Read more

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);42.5nC@4.5V/Number;1 N-channel/Pd - Power Dissipation;120W/RDS(on);3.5mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);110A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input Capacitance;4.83nF


    30V 3.5mΩ@4.5V 1 N-channel 120W PDFNWB-8L-EP(5x6) Single FETs, MOSFETs RoHS

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