JSCJ-Single FETs, MOSFETs-CJAC35N03

Description

Drain to Source Voltage;30V/Gate Charge(Qg);40nC@10V/Number;1 N-channel/Pd - Power Dissipation;125W/RDS(on);12mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);228pF/Current - Continuous Drain(Id);35A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input Capacitance;2.013nF


30V 12mΩ@4.5V 1 N-channel 125W PDFNWB-8L-EP(5x6) Single FETs, MOSFETs RoHS

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Drain to Source Voltage;30V/Gate Charge(Qg);40nC@10V/Number;1 N-channel/Pd - Power Dissipation;125W/RDS(on);12mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);228pF/Current - Continuous Drain(Id);35A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);40nC@10V/Number;1 N-channel/Pd - Power Dissipation;125W/RDS(on);12mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);228pF/Current - Continuous Drain(Id);35A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input Capacitance;2.013nF


    30V 12mΩ@4.5V 1 N-channel 125W PDFNWB-8L-EP(5x6) Single FETs, MOSFETs RoHS

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