JSCJ-Single FETs, MOSFETs-CJCD2005

Description

Drain to Source Voltage;20V/Gate Charge(Qg);17nC@4.5V/Number;1 N-channel/RDS(on);12.5mΩ@2.5V/Reverse Transfer Capacitance (Crss@Vds);200pF/Current - Continuous Drain(Id);8A/Gate Threshold Voltage (Vgs(th));400mV/Ciss-Input Capacitance;1.8nF


20V 12.5mΩ@2.5V 1 N-channel DFNWB-6-EP(3x2) Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;20V/Gate Charge(Qg);17nC@4.5V/Number;1 N-channel/RDS(on);12.5mΩ@2.5V/Reverse Transfer Capacitance (Crss@Vds);200pF/Current - Continuous Drain(Id);8A/Gate Threshold Voltage (Vgs(th));400mV/Ciss-Input Capacitance;1.8nF20V 12.5mΩ@2.5V 1 N-channel DFNWB-6-EP(3x2)... Read more

$3.90 Excl. VAT

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    Description

    Drain to Source Voltage;20V/Gate Charge(Qg);17nC@4.5V/Number;1 N-channel/RDS(on);12.5mΩ@2.5V/Reverse Transfer Capacitance (Crss@Vds);200pF/Current - Continuous Drain(Id);8A/Gate Threshold Voltage (Vgs(th));400mV/Ciss-Input Capacitance;1.8nF


    20V 12.5mΩ@2.5V 1 N-channel DFNWB-6-EP(3x2) Single FETs, MOSFETs RoHS

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