JSCJ-Single FETs, MOSFETs-CJP10N65

Description

Drain to Source Voltage;650V/Gate Charge(Qg);44nC/Number;1 N-channel/RDS(on);700mΩ@10V/Reverse Transfer Capacitance (Crss@Vds);2.2pF/Current - Continuous Drain(Id);10A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;1.43nF


650V 700mΩ@10V 1 N-channel TO-220 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;650V/Gate Charge(Qg);44nC/Number;1 N-channel/RDS(on);700mΩ@10V/Reverse Transfer Capacitance (Crss@Vds);2.2pF/Current - Continuous Drain(Id);10A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;1.43nF650V 700mΩ@10V 1 N-channel TO-220... Read more

$3.78 Excl. VAT

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    Description

    Drain to Source Voltage;650V/Gate Charge(Qg);44nC/Number;1 N-channel/RDS(on);700mΩ@10V/Reverse Transfer Capacitance (Crss@Vds);2.2pF/Current - Continuous Drain(Id);10A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;1.43nF


    650V 700mΩ@10V 1 N-channel TO-220 Single FETs, MOSFETs RoHS

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