JSCJ-Single FETs, MOSFETs-CJQ07N10

Description

Drain to Source Voltage;100V/Gate Charge(Qg);31.9nC@10V/Number;1 N-channel/Pd - Power Dissipation;1.4W/RDS(on);30mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);276pF/Current - Continuous Drain(Id);7A/Gate Threshold Voltage (Vgs(th));1.2V/Ciss-Input Capacitance;1.848nF


100V 30mΩ@4.5V 1 N-channel 1.4W SOP-8 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;100V/Gate Charge(Qg);31.9nC@10V/Number;1 N-channel/Pd - Power Dissipation;1.4W/RDS(on);30mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);276pF/Current - Continuous Drain(Id);7A/Gate Threshold Voltage (Vgs(th));1.2V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;100V/Gate Charge(Qg);31.9nC@10V/Number;1 N-channel/Pd - Power Dissipation;1.4W/RDS(on);30mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);276pF/Current - Continuous Drain(Id);7A/Gate Threshold Voltage (Vgs(th));1.2V/Ciss-Input Capacitance;1.848nF


    100V 30mΩ@4.5V 1 N-channel 1.4W SOP-8 Single FETs, MOSFETs RoHS

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