JSMSEMI-Single FETs, MOSFETs-AOD407

Description

Drain to Source Voltage;60V/Gate Charge(Qg);9.86nC@4.5V/Number;1 P-Channel/Pd - Power Dissipation;34.7W/RDS(on);68mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);65pF/Current - Continuous Drain(Id);20A/Gate Threshold Voltage (Vgs(th));1.2V/Ciss-Input Capacitance;1.44nF


P-Channel 60V 20A 34.7W Surface Mount TO-252

Product form

Drain to Source Voltage;60V/Gate Charge(Qg);9.86nC@4.5V/Number;1 P-Channel/Pd - Power Dissipation;34.7W/RDS(on);68mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);65pF/Current - Continuous Drain(Id);20A/Gate Threshold Voltage (Vgs(th));1.2V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;60V/Gate Charge(Qg);9.86nC@4.5V/Number;1 P-Channel/Pd - Power Dissipation;34.7W/RDS(on);68mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);65pF/Current - Continuous Drain(Id);20A/Gate Threshold Voltage (Vgs(th));1.2V/Ciss-Input Capacitance;1.44nF


    P-Channel 60V 20A 34.7W Surface Mount TO-252

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