JSMSEMI-Single FETs, MOSFETs-BSS123-JSM

Description

Drain to Source Voltage;100V/Number;1 N-channel/Pd - Power Dissipation;350mW/RDS(on);10Ω@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);2.8pF/Current - Continuous Drain(Id);170mA/Gate Threshold Voltage (Vgs(th));2.8V/Ciss-Input Capacitance;43pF


N-Channel 100V 170mA 0.35W Surface Mount SOT-23

Product form

Drain to Source Voltage;100V/Number;1 N-channel/Pd - Power Dissipation;350mW/RDS(on);10Ω@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);2.8pF/Current - Continuous Drain(Id);170mA/Gate Threshold Voltage (Vgs(th));2.8V/Ciss-Input Capacitance;43pFN-Channel... Read more

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    Description

    Drain to Source Voltage;100V/Number;1 N-channel/Pd - Power Dissipation;350mW/RDS(on);10Ω@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);2.8pF/Current - Continuous Drain(Id);170mA/Gate Threshold Voltage (Vgs(th));2.8V/Ciss-Input Capacitance;43pF


    N-Channel 100V 170mA 0.35W Surface Mount SOT-23

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