JSMSEMI-Single FETs, MOSFETs-FDC5614P

Description

Drain to Source Voltage;60V/Gate Charge(Qg);15nC@10V/Number;1 P-Channel/Pd - Power Dissipation;2W/RDS(on);96mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);48pF/Current - Continuous Drain(Id);3.3A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input Capacitance;1.08nF


P-Channel 60V 3.3A 2W Surface Mount SOT-23-6

Product form

Drain to Source Voltage;60V/Gate Charge(Qg);15nC@10V/Number;1 P-Channel/Pd - Power Dissipation;2W/RDS(on);96mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);48pF/Current - Continuous Drain(Id);3.3A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;60V/Gate Charge(Qg);15nC@10V/Number;1 P-Channel/Pd - Power Dissipation;2W/RDS(on);96mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);48pF/Current - Continuous Drain(Id);3.3A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input Capacitance;1.08nF


    P-Channel 60V 3.3A 2W Surface Mount SOT-23-6

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